LAM 853-150806-001 high-performance RF match network module
LAM 853-150806-001 high-performance RF match network module
LAM 853-150806-001 is a high-performance RF match network module, a core component of LAM Research’s etch system architecture. It serves as the critical link between the RF generator and the plasma chamber, tuning impedance to maximize power transfer efficiency—essential for creating stable plasma environments where etching occurs.
Model LAM 853-150806-001
Brand LAM Research
Type RF Match Network Module
Power Supply 48 V DC ± 5%
Operating Temperature 18°C to 45°C
Mounting Rack-Mount with Anti-Vibration Brackets
Dimensions 220 mm x 160 mm x 100 mm
Weight 2.1 kg
Interfaces Ethernet, RS-485, Analog Control Signals
Certifications SEMI S2/S3, CE, UL 61010
Cooling Forced Air (Integrated Fan)
Environmental Rating Class 1 Cleanroom Compatible
RF Frequency Range 13.56 MHz (Standard)
Power Handling Up to 3000 W
Impedance Tuning Range 50 to 500 ohms
LAM 853-150806-001 is a high-performance RF match network module, a core component of LAM Research’s etch system architecture. It serves as the critical link between the RF generator and the plasma chamber, tuning impedance to maximize power transfer efficiency—essential for creating stable plasma environments where etching occurs.
853-150806-001
Designed to integrate seamlessly with LAM’s Versys® and Sabre® etch platforms, this module acts as a dynamic regulator: it continuously adjusts to changes in chamber conditions (like gas composition or pressure) to maintain optimal RF coupling. For process engineers, its value lies in its ability to reduce process variability—directly translating to higher wafer yields. For integrators, its compatibility with LAM’s FabWorks® control software simplifies system integration, ensuring smooth communication with upstream process controllers. In short, LAM 853-150806-001 is the unsung hero that keeps plasma etch processes consistent, reliable, and repeatable.
853-150806-001
Main features and advantages:
At its core, LAM 853-150806-001 excels in dynamic impedance matching, with a response time of less than 50 microseconds—fast enough to counteract sudden plasma instabilities that could otherwise distort wafer features. This speed, paired with a tuning range of 50 to 500 ohms, allows it to adapt to varying process conditions, from low-power polysilicon etching to high-power metal etch steps.
Hardware design prioritizes the harsh realities of semiconductor cleanrooms. The module features a hermetically sealed aluminum housing with a specialized ceramic coating, resistant to corrosive byproducts from halogen-based process gases (like CF4 or Cl2). Its compact, modular build (30% smaller than older generations) fits into dense system racks, freeing up space for additional process monitoring tools.
Compatibility is a standout feature: LAM 853-150806-001 integrates with LAM’s RF generators (including the 2000W and 3000W models) and supports SECS/GEM protocols for seamless data flow to fab-wide MES systems. Long-term reliability is ensured by a built-in thermal management system that operates efficiently in 18°C to 45°C cleanroom environments, with a mean time between failures (MTBF) exceeding 150,000 hours—critical for minimizing unplanned downtime in 24/7 production cycles.
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Technical specifications:
Model LAM 853-150806-001
Brand LAM Research
Type RF Match Network Module
Power Supply 48 V DC ± 5%
Operating Temperature 18°C to 45°C
Mounting Rack-Mount with Anti-Vibration Brackets
Dimensions 220 mm x 160 mm x 100 mm
Weight 2.1 kg
Interfaces Ethernet, RS-485, Analog Control Signals
Certifications SEMI S2/S3, CE, UL 61010
Cooling Forced Air (Integrated Fan)
Environmental Rating Class 1 Cleanroom Compatible
RF Frequency Range 13.56 MHz (Standard)
Power Handling Up to 3000 W
Impedance Tuning Range 50 to 500 ohms
Contact Us Phone:+86 16626708626 WeChat/WhatsApp:+86 16626708626 Email: 3772179818@qq.com
853-150806-001
Application areas:
In the high-precision realm of semiconductor fabrication, where even nanoscale imperfections can render entire wafer batches useless, LAM 853-150806-001 emerges as a critical workhorse. This component finds its home in plasma etch chambers—specifically within LAM’s advanced etch systems used to carve intricate circuit patterns into silicon wafers for logic chips, memory devices, and sensors.
Foundries producing 7nm to 28nm node semiconductors rely on LAM 853-150806-001 to stabilize radio frequency (RF) power delivery during etching, a process where consistent energy levels directly determine feature accuracy and edge sharpness. It’s equally vital in dielectric etching applications, where it mitigates power fluctuations that could cause uneven material removal. Used in industrial automation setups across leading fabs, this module addresses the industry’s pressing challenges: maintaining sub-micron process control, reducing wafer scrap rates, and supporting 24/7 production uptime. Whether in high-volume memory fabs or specialty chip manufacturing, LAM 853-150806-001 ensures the precision needed to meet tight yield targets.
Related products:
LAM 853-150806-002 – Higher-power variant, supporting up to 6000 W for aggressive metal etching processes. LAM 853-150806-003 – Dual-frequency model, adding 2 MHz capability for advanced 3D NAND etch applications. LAM 853-149207-001 – RF generator that pairs with LAM 853-150806-001 to deliver stable power to etch chambers. LAM 853-151022-001 – RF monitoring module that works with LAM 853-150806-001 to log power data for process optimization. LAM 853-150806-004 – Legacy predecessor with limited tuning range, used in older LAM etch systems. LAM 853-152109-001 – Protective surge suppressor that shields LAM 853-150806-001 from voltage spikes. LAM 853-150307-001 – Calibration tool specifically designed to verify tuning accuracy of LAM 853-150806-001.
Installation and maintenance:
Pre-installation, ensure the mounting rack is level and grounded to LAM’s specifications (≤1 ohm resistance to earth ground) to prevent RF interference. Allow a minimum 50 mm clearance on all sides for airflow—the integrated fan requires unobstructed venting to maintain operating temperatures. Verify that RF cables connecting LAM 853-150806-001 to the generator and chamber are properly rated for 3000 W at 13.56 MHz; damaged cables can cause impedance mismatches and reduce efficiency.
For maintenance, schedule quarterly inspections to check for corrosion on RF connectors—particularly in systems using chlorine-based gases. Perform tuning calibration every 6 months using LAM’s proprietary software to ensure impedance matching accuracy within ±2 ohms. The module’s firmware should be updated via LAM’s ServicePortal whenever new etch recipes are introduced, as software updates often include algorithm improvements to handle novel process conditions.
WhatsApp: +86 16626708626
Email: 3772179818@qq.com
Phone: +86 16626708626
